A High Output Power 1V Charge Pump and Power Switch for Configurable, In-Field-Programmable Metal eFuse on Intel 4 Logic Technology

A flexible, low-cost design solution for In-Field-Programmable (IFP) metal eFuse is presented. The design maximizes fuse yield through a tunable program voltage provided by a two-stage charge pump (CP), placed in closed-loop (CL) with a low dropout regulator (LDO). The integration of CP and LDO solves electrical over-stress (EOS) concerns, and achieves stability and low voltage operation through several design innovations, and does not require a specific power sequence or MIM cap. This design is implemented and characterized on Intel 4 technology, where >99.9% successful fuse bit program was measured across [-40C, 125C] temperature, and down to 0.95V.