Enhanced performance and low-power capability of SiGeAsSe-GeSbTe 1S1R phase-change memory operated in bipolar mode

The impact of pulse polarity on the performance of SiGeAsSe-GeSbTe 1S1R cell is studied. Reversing the Write polarity leads to increased memory window with possibility of multi-level programming. The Write current can be reduced down to <40uA, enabling low-power operation. Good cycling endurance (>1e8) and retention characteristics are maintained.