High speed (1ns) and low voltage (1.5V) demonstration of 8Kb SOT-MRAM array

We demonstrated an 8Kb SOT-MRAM array which achieves the highest field-free switching speed (1ns) never reported. The low transistor switching voltage (V
SW
) 1.5V at switching current density (J
SW
) 68MA/cm
²
is attributed to the unique tungsten-based cSOT channel material (SCM) which provides high spin-Hall angle (~0.6) and low resistivity (160μΩ-cm) with 400℃ thermal budget. The 8Kb SOT-MRAM array also showed good read window and array yield thanks to the promising MTJ etching process. Excellent performances such as high retention ( >>10 years at RT) and high endurance 7e12 cycles are demonstrated as well.