Investigation Of The Conversion Of GaN Channel Into Crystalline GaON In Fully Recessed Double Gate HEMT Toward Normally-Off Operation

In this work, fully recessed gate normally-off AlGaN/GaN MIS-HEMT(Metal Insulator Semiconductor High Electron Mobility Transistors) is explored with the introduction of extra crystalline GaON layer below the recessed region by converting the GaN channel. At first, Formation of 2DEG(two-dimensional electron gas) at AlGaN/GaN hetero-interface is discussed then it’s removal with recessed gate structure is explored. A positive shift of transconductance is found with fully recessed gate structure. With GaN channel threshold voltage is around 0.61V and addition of crystalline GaON layer shifts this value to 0.92V. But this layer limits the saturation drain current to a lower value because of it’s lower electron mobility. Finally, the effect of GaON thickness on threshold voltage and output characteristics are also explored.