Investigation of Efficiency Enhancement in Tunnel Junction GaN Light Emitting Diodes

Without light we can’t imagine this world. In lightning system, LED plays a vital role. In 1950’s, LED by using Gallium Arsenide, was invented. But its output power radiance is too low. To overcome this drawback, Gallium Nitride is used in LED to enhance its glow. After Gallium Arsenide, p++-GaN/i-InGaN/n++-GaN layers are used in Tunnel Junction Structures. These Tunnel Junction Layer (TJL) GaN LEDs were simulated and it is found that output power improved by 36% with respect to that of conventional LEDs. The tunnel junction layers used in such a way to decrease the tunnel junction resistance is called hybrid tunnel junction layers. The resistances of tunnel junction layers were found to be 9.25×10⁻³ Ω cm². Due to this, there is a drop in its efficiency. To enhance its tunnelling effect, the AlGaN/InGaN is interfaced with it. Thus, the proposed GaN light blooming along with TJL proves it unswerving.