Optimization of Novel L-shaped Gate All Around Junctionless Field Effect Transistor

In this work, a novel L-shaped gate all around junctionless field effect transistor with assistant gate, in which drain side is vertically extended, is proposed. Its electronic characteristics have also been extensively studied by employing TCAD device simulation. The performance comparison between the proposed device, conventional gate all around, and L-shaped gate all around junctionless devices has been investigated. Furthermore, optimization of the device design parameters, such as doping concentration, the assistant gate thickness, spacer oxide layer thickness between the main and assistant gate, extension height of drain region has been performed and the optimal physical parameters have been proposed.