Detecting Temporal Correlation on HfO2 Based RRAM on 65nm CMOS Technology

Hafnium-oxide based bipolar RRAM was investigated for high-level temporal correlation detection, for in-memory computing. The experimental analog data of HfO2 RRAM, both in RESET and SET regimes was evaluated to detect 10 correlated processes from 25 processes on a 5x5 RRAM array. Our method gave 36,000–53,000 times less energy consumption than that of a previous implementation with phase change memory, and a predicted acceleration of 1600–2100 times the execution time than that of 1xPOWER8 CPU (1 thread) for detecting correlation between 25 processes.