Electret/High-k Solution Dielectric for Low Voltage Synaptic Transistors With Near Linear and Ambipolar Weight Update

Organic synaptic transistors are highly appreciated for brain-like and biocompatible computing systems, but remain challenging for mimicking linear and symmetric weight updates at low voltages. Here, we propose a spontaneously and simply formed floating gate structure to address this issue by regulating the charge traps around the discrete small grains in spin-coated, low temperature functionalized (200 °C), and high-
${k}$
(>10) zirconium oxide (ZrO
_x
) dielectrics. Basic learning and memory synaptic functionalities with excellent long-term plasticity, near linear and ambipolar weight update protocol, and the highest image recognition accuracy record of 97.4% are achieved. This work offers great significance in the fabrication of cost-effective and energy-efficient neuron network.