Low power design of embedded NOR type FLASH memory module (EFMM)

A Novel 40-ns high speed (HS) and 30 mA low power (LP) embedded flash memory modules (EFMM) such as 1 M flash memory cell array, three (4V, 5V, 9V) positive high voltage circuits and -7V negative high voltage circuit plus VHDL-modeled logic sub-systems implemented on 0.25 /spl mu/m CMOS SLP/5LM technology are presented. It is shown that our EFMM which is being used in multi-cube results in 30 mA active read current and 100 /spl mu/A standby current. Mixed mode design for analogs-high voltage charge pump shows stable 9V high for programming and further 1.2V bandgap reference voltage interfacing with the high voltage circuits and for logic designs are developed by optimized IP-standard (set by Synopsys) VHDL modeling. Chip size with 56-pin indicates 5.7 mm/sup 2/.