A DC-10GHz SPDT RF Switch with Bulk Self-Biasing Technique in 0.25µm BiCMOS Process

In order to improve integration of the RF front-end module, this paper implements RF front-end circuit design based on 0.25um BiCMOS technology, which includes a low noise amplifier, a power amplifier and a RF switch. In the RF switch circuit, a symmetrical structure is adopted. Diode-connected MOS transistor uesd for bulk self-biasing technique is proposed to reduce the insertion loss and simplify the biasing circuitry. The design shows a well-balanced performance: from DC to 10GHz, the RF switch achieves less than 1.6dB insertion loss, greater than 28dB isolation and the level of 33.92dBm P1dB at 6GHz. Results show that the impact of RF switch on low noise amplifier and power amplifier is negligible in DC - 6GHz, achieving the goal of improving integration without degrading performance.