Ti Schottky barrier diodes on n-type 6H-SiC

Using thermal evaporation, Ti/6H-SiC Schottky barrier diodes (SBD) were fabricated. They showed good rectification characteristics from room temperature to 200/spl deg/C. At low current density, the current conduction mechanism follows the thermionic emission theory. These diodes demonstrated a low reverse leakage current of below 1 /spl times/ 10/sup -4/Acm/sup -2/. Using neon implantation to form the edge termination. the breakdown voltage was improved to be 800 V. In addition, these SBDs showed superior switching characteristics.