300mm Full Thickness Si-Based IC Singulation Using Plasma Dicing for Advanced Packaging Technologies

This paper demonstrates the ability of fully singulating a 775 μm thick Si wafer with a high aspect ratio of 13:1 and 20:1, mask selectivity of > 200:1 and achieving ~90° vertical sidewall profile using Plasma Dicing (PD) techniques. The full thickness Si wafer bonded to glass wafer or mounted to a ring frame is coated with a laser coat material and laser ablated to expose the Si for Bosch plasma etch process. The etch, polymerization cycles realize the full singulation of the Si while enabling uniform landing on the temporary bonding adhesive using soft landing and end point detection schemes. To realize highest aspect ratios, 2 different mask openings 40 μm (aspect ratio ~20:1) and 60 μm (aspect ratio ~13:1) are studied. This paper also illustrates the impact of process and sidewall quality for PD on the die break strength (DBS) at different orientations and presents a comparison of sidewall quality and process times to conventional mechanical blade dicing for select die size.