PbZr/sub 0.5/Ti/sub 0.5/O/sub 3/ thin films prepared on La/sub 0.5/Sr/sub 0.5/CoO/sub 3//LaNiO/sub 3/ heterostructures for integrated ferroelectric devices

La/sub 0.5/Sr/sub 0.5/CoO/sub 3/ /LaNiO/sub 3/ (LSCO/LNO) heterostructures have been grown on Si[100] substrate by chemical solution deposition (MSD) technique. PbZr/sub 0.5/Ti/sub 0.5/O/sub 3/ (PZT) thin films are deposited onto LSCO/LNO heterostructure by a modified sol-gel method. The films were crystallized by rapid thermal annealing (RTA) process. The lowest resistivity (550 /spl mu//spl Omega//spl middot/cm) of LSCO/LNO heterostructures was obtained by annealing at 750/spl deg/C. Field-emission scanning electron microscopy and X-ray diffraction analysis show that LSCO/LNO and PZT thin films are polycrystalline and entirely perovskite phase. The Pt/PZ|T/LSCO/LNO capacitors were fabricated and showed no polarization fatigue after 10/sup 9/ switching cycles. The remnant polarization P/sub r/ and the coercive field E/sub c/ are about 28 /spl mu/C/cm/sup 2/ and 64 kV/cm, respectively. At a high frequency of 1 MHz, the dielectric constant of PZT thin films is 320.