Fabrication and characteristics of Au/Cr/PZT/Pt/Ti/ZrO/sub 2//Si structure for MFMIS FET application

Metal-ferroelectric-semiconductor (MFS) device is a very hopeful new generation memory device due to its unique properties such as non-volatility, non-destructive read out, high speed, good endurance, radiation tolerance and high density. However, the ferroelectric thin film usually cracks when it crystallizes on the buffer layer such as ZrO/sub 2/ thin film, which will make the device fail. We report, in this paper, the MFMIS structure of Au/Cr/PZT/Pt/Ti/ZrO/sub 2//Si was successfully fabricated to inhibit the PZT ferroelectric thin film from cracking. The C-V characteristic of the MFMIS capacitor was investigated.