Comparison between MBE-based SiGe/Si HBT and Si-based bipolar transistor technologies

In the paper, the comparison between MBE-based SiGe/Si heterojunction bipolar transistors (HBT) technologies and Si bipolar transistors technologies is made. The SiGe/Si film used in the present work was grown by solid source molecular beam epitaxy (MBE) system. 3 /spl mu/m process technology was used to develop SiGe HBT devices. The experimental results indicate that both the direct current (DC) characteristics and the cutoff frequency of SiGe HBT are satisfactory. The current gain /spl beta/ of HBT devices is 50, when the collector voltage V/sub C/=2 V and the collector current I/sub C/=5 mA. The cutoff frequency f/sub T/=5.1 GHz, and the uniformity of the cutoff frequency of HBT is quite good. With the same layout, 3 /spl mu/m process technology was used to develop Si bipolar transistor devices. The measured results show that the cutoff frequency f/sub T/ of the Si devices is 1.5 GHz.