Hybrid Ferroelectric P(VDF-TrFE)/BZT Insulators for Pentacene-Based Nonvolatile Memory Applications

This study demonstrates a pentacene-based nonvolatile memory using a ferroelectric poly (vinylidene fluoride-trifluoroethylene)
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Barium Zirconate Titanate (P(VDF-TrFE)
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BZT) as a hybrid gate dielectric for thin film transistors (TFTs). The experiment results show that the solution-processed BZT is amorphous and has no obvious ferroelectricity. However, stacking the BZT and the P(VDF-TrFE) can effectively reduce the leakage current due to the improvement of the thin film interface quality. To further understand the memory properties, endurance and retention reliability tests were conducted. The devices exhibit good memory characteristics at a low operating voltage of ±10 V and a large storage window of 7 V.