Self-assembled epitaxial CoSi/sub 2//Si[100] nanostructures

We have developed a method for fabricating self-assembled epitaxial CoSi/sub 2/-nanostructures using only conventional optical lithography and standard silicon processing steps. This method was successfully applied to ultra-thin epitaxial CoSi/sub 2/ layers grown on Si[100] and silicon-on-insulator (SOI) substrates. A nitride mask induces a stress field near its edges into the CoSi/sub 2//Si heterostructure and leads to the separation of the CoSi/sub 2/ layer in this region during a rapid thermal oxidation step. Highly uniform gaps with dimensions down to 40 nm appear along the edge of the mask. Combined with selective etching we achieved highly homogenous silicide wires with diameters down to 50 nm. The generated gaps and wires can be used as building blocks for silicon-nanodevices such as NanoMOSFETs.