Multi-generation CVD low /spl kappa/ films for 0.13 /spl mu/m and beyond

After several delays in the implementation of /spl kappa/<3.0 inter metal dielectric, the semiconductor industry has finally begun to use these low /spl kappa/ materials in manufacturing in 2001. After several years of intense industry wide evaluation and assessment, the most critical requirements for these materials were identified to be high mechanical strength, low cost, high productivity and extendibility to at least another generation. CVD low /spl kappa/ films, IMD film black diamond (BD) and barrier/etch stop film BLO/spl kappa/, have become the materials of choice for 0.13 /spl mu/m an below generation IMD because of their silicon oxide like materials properties, proven manufacturability using time-tested familiar PECVD tool sets, and the recently proven extendibility to /spl kappa/<2.5. This paper focuses on the characteristics and performance of these materials both in Cu damascene integration and in production environment.