Growth of Si-GaAs crystal under the equivalent micro-gravity

When growth of GaAs by method of MLEC and the magnetic intensity is the critical value B/sub 0/, all macro-convections in melt were completely controlled and the transport of mass only depends on diffusion. In this case, Growth of GaAs is under the equivalent micro-gravity. The effective segregation coefficients of impurities trend to one. The homogeneity and micro zone homogeneity of crystals were greatly improved.