Evaluation of Reliability and Lifetime of 650-V GaN-on-Si Power Devices Fabricated on 200-mm CMOS-Compatible Process Platform for High-Density Power Converter Application

The degradation of dynamic on-resistance (dR
on
) of GaN HEMT may lead to an increase of power dissipation or even thermal failure in the power converter. In this work, a comprehensive evaluation of reliability and switching lifetime of a 650-V commercial GaN-on-Si HEMT is conducted. The device shows a quite stable dR
on
(< 1.2x) by adopting a strain layer. The emission microscope is used to detect the photoemission in situ based on the wafer-level switching stress system. The criteria of 1.3x dR
on
is defined based on the efficiency and temperature in the system application. Finally, a novel acceleration factor extraction method is proposed, which predicts a 29-year lifetime at 400 V with 100-ppm failure rate.