The smart ICeGaNTM platform with sensing and protection functions for both enhanced ease of use and gate reliability

We developed a novel 650V power ICeGaN
^TM
(Integrated Circuit Enhancement GaN) platform with state-of-the-art static and dynamic performance, significantly enhanced ease-of-use and increased gate reliability achieved through monolithic integration of a smart gate interface together with the HEMT. The ICeGaN
^TM
devices have a higher threshold voltage ~ 2.8V (unlike the conventional p-GaN HEMT) and a built-in Miller clamp in order to suppress effects such as dV/dt related spurious turn-on events and achieve very fast turn-off. Moreover, they offer a wide range of gate drive voltages, up to 20V (well in excess of the standard 7V for p-GaN HEMTs) without any compromise in the device transconductance or dynamic performance. In contrast to other existing GaN devices, the smart ICeGaN
^TM
HEMT can be driven with standard silicon gate drivers and does not require negative voltages for turn-off, hence removing the need for external drive and clamping interfaces.