Superior Eoff –Vcesat Trade-off of 5V-Gate-Driven 3.3kV Back-gate-Controlled IGBTs (BC-IGBTs)

Superior performance of Back-gate-Controlled IGBT (BC-IGBT) by optimizing both front side and back side design has been demonstrated. Front side trench gate extrusion D
T
-D
P
(trench depth minus p-base depth) and back side p-collector dose N
PC
were varied to see their effects on the performance. Combining the increase of N
PC
and D
T
-D
P
with back gate control, significant reduction of V
cesat
(2.1 to 1.7V) was realized, while keeping E
off
unchanged. These results show that BC-IGBT is an attractive candidate for a high performance switching device.