Demonstration of the Surge Current Capability of Embedded SBDs in SiC SBD-Integrated Trench MOSFETs with a Thick Cu Block

This study investigated the surge current capabilities of Schottky barrier diodes (SBDs) embedded in a 1.2 kV SiC SBD-integrated trench MOSFET (SWITCH-MOS). The SBD embedded in the SWITCH-MOS with a Cu block attached to the surface showed a superior surge current capability to a standard SWITCH-MOS, and equivalent to that of a conventional SiC trench MOSFET (IE-UMOSFET). This is because the Cu block attached to the surface suppresses the increase in the temperature of the device surface during high current conduction in the SBD and prevents short-circuits between the gate and source induced when the Al electrode melts. Hence, it was found that a SWITCH-MOS with a Cu block achieves the same surge current capability as an IE-UMOSFET.