Interaction Mechanism Between CGD and CDS Based on Space Competition and Optimization Method of Dynamic Characteristic for 600V Super-Junction VDMOS

A novel view of the interaction between C
GD
and C
DS
based on space competition is proposed in this paper. For small cell pitch super-junction vertical double-diffused MOSFET (SJ VDMOS), C
GD
and C
DS
have a close interaction in the center part of the depletion region. By changing the source-end structure, the electric field lines originally contributed to the C
GD
can be collected by the source end, thereby realizing the indirect modulation of the C
GD
. C
GD
and C
DS
present an opposite trend as one falling and the other rising. By this theory, we propose a SJ VDMOS with additional P-type implantation (API) based on a multi-epitaxy/multi-implant platform. Both simulated and experimental results validate the feasibility of reducing C
GD
with the easy-modified C
DS
. SJ VDMOS with API realizes a faster switching process, and the overshoot remains low while achieving BV > 600 V and a low R
ON,SP
of 11.35 mΩ∙cm
²
.