Comparative Study of 6.5 kV 4H-SiC Discrete Packaged MOSFET, JBSFET, and Co-Pack (MOSFET and JBS Diode)

This paper reports the detailed comparison of packaged level, 6.5 kV rated 4H-SiC power MOSFET, MOSFET co-packaged with JBS diode (Co-Pack), and monolithically integrated 6.5 kV 4H-SiC MOSFET and JBS diode (JBSFET). JBSFET was designed to disable the PN turn for reliability purposes and save the chip and process cost from the one-chip integration and single metal scheme. Static and dynamic electrical characteristics of stand-alone MOSFET, Co-Pack, and JBSFET are compared to signify the benefit of JBSFET in terms of performance, reliability, and economical point of view.