Experimental Study on Electrical Characteristics of Large-Size Vertical β-Ga2O3 Junction Barrier Schottky Diodes

In this work, a novel vertical β-Ga
2
O
3
junction barrier Schottky diodes (JBSDs) with periodically distributed Ga
2
O
3
/NiO heterojunction and field plate (FP) are fabricated and investigated. Its large size anode contact area (A) is designed with 3×3 mm
²
and 4×4mm
²
. The measured breakdown voltage (BV) and specific on-resistance (R
on,sp
) values for the fabricated FP JBSD with A = 9mm
²
/16mm
²
are 550V/500V and 11mΩ•cm
²
/15mΩ•cm
²
, respectively. The current-voltage (I-V) and capacitance-voltage (C-V) characteristics of 16mm
²
FP JBSD are investigated before and after long-term high-temperature stress. These results show that the fabricated large-size Ga
2
O
3
FP JBSD achieves good electrical performance and thermal reliability, showing the great potential of Ga
2
O
3
JBSD to operate under high-temperature condition.