Experimental demonstration, challenges, and prospects of the vertical SiC FinFET

In this paper we report the first vertical, normally-off high voltage SiC FinFET. The device has a breakdown voltage of ~ 1kV, a specific on-state resistance R
on
of 0.7mΩcm
²
, and a threshold voltage V
th
of 2.2V. It is based on a trench technology with a pitch between trenches (fin width W
fin
) of 144nm. The FinFET effect is discussed for this specific device and for a wider class of SiC power devices rated at different voltages. A calibrated TCAD model is developed for a physical insight into the device’s operation. Finally, the paper outlines the challenges and prospects of this structure.