Compact Modeling of Nonideal Trapping/Detrapping Processes in GaN Power Devices

Compact modeling of charge trapping processes in GaN transistors is of fundamental importance for advanced circuit design. The goal of this article is to propose a methodology for modeling the dynamic characteristics of GaN power HEMTs in the realistic case where trapping/detrapping kinetics are described by stretched exponentials, contrary to ideal pure exponentials, thus significantly improving the state of the art. The analysis is based on: 1) an accurate methodology for describing stretched-exponential transients and extracting the related parameters and 2) a novel compact modeling approach, where the stretched exponential behavior is reproduced via multiple
RC
networks, whose parameters are specifically tuned based on the results of 1). The developed compact model is then used to simulate the transient performance of the HEMT devices as a function of duty cycle and frequency, thus providing insight on the impact of traps during the realistic switching operation.