Application of a Nonlinear Drift Memristor Model in Analogue Reconfigurable Devices

In this paper, a highly nonlinear drift transition metal oxide-based memristor model and its applications in analogue reconfigurable devices are considered. In a combination with a nonlinear window function, containing a smooth and differentiable step-like function, its incorporation and analysis in LTSPICE environment are described. Several memristor-based analogue reconfigurable circuits, as an integrator, a differentiating circuit, and a band-pass filter are analysed, applying the modified memristor model. The considered model is with an increased nonlinearity, has activation thresholds and successfully represents the boundary effects for hard-switching operation. The alteration of the characteristics of the considered devices is founded on the change of memductance. The terminal state problems are also avoided, due to the applied step-like function. The derived results are compared with those, obtained from several existing memristor models and a good proximity is established. The proper operation of the considered memristor model in complex electronic circuits is confirmed.