Mission-Profile Based Reliability Analysis Scheme of IGBT Modules for Traction Rectifier

The insulated gate bipolar transistors (IGBTs) are prone to failure due to complex conditions in the high-speed train. Meanwhile, the factors affecting the reliability of IGBTs are various. However, in most reliability analysis methods based on mission profiles, the mission profile is simplified, which may cause inaccurate results. To precisely predict the aging of IGBTs, a reliability analysis method of IGBTs based on a more accurate mission profile is proposed in this digest. In this method, various operation scenarios of the train are considered. Then, the output power of the traction rectifier is computed with the consideration of the real line condition and operation modes. With the assistance of the thermal network, the power loss and the junction temperature are accordingly calculated. Moreover, the rain-flow algorithm and Miner's rule are performed to obtain the degradation of IGBTs. The effectiveness of the proposed method is verified through extensive simulation results.