Monitoring System for Plasma-Electrolyte Synthesis of Oxides, Which Are the Functional Medium of Resistive Switching in Metal-Oxide-Metal Structures

The paper considers the possibility of using the plasma-electrolyte synthesis technology for the oxide layers formation intended for the structures with the resistive switching effect (memristors) obtain. It is shown that to study the formation of not typical for this class of electrolytic-plasma processes a nanoscale thickness oxide layers, a special organization of joint the technological current source and the monitoring system operation (synchronous start mode) is required. The monitoring system equipment that implements this operation mode is described. As a result, an example of new method for studying the plasma processes initialization based on the developed synchronized data acquisition method and high-speed video recording is given, which makes it possible to determine with high accuracy the forming pulses electrical characteristic instantaneous values fixation moment and compare them with the treated surface video image.