Practical Realization of GaN’s Capability: GaNFast power ICs introduce lossless sensing and autonomous protection

The system-level value of wide bandgap power semiconductors of higher efficiency, smaller size and weight, and more sustainable energy usage in our power supplies and motor drives is being demonstrated now. Gallium nitride (GaN) power FETs are replacing silicon (Si) power MOSFETs in applications from 48 V to 800 V. Silicon carbide (SiC) is replacing legacy IGBTs in applications >800 V. The previous barriers to implementing what was theoretically possible with these technologies included manufacturability, reliability, system complexity, and cost (
Table 1
). But over just the last few years with numerous advancements, it’s clear that those challenges have been addressed as 10’s of millions of units of GaNFast power ICs have been shipped in mass production in applications from fast mobile chargers to gaming systems to notebook computer adapters, and more.