Realization of Monolithic SiC Power IC Utilizing the Compatible Process for CMOS and Power MOSFET

We realized a monolithic silicon carbide (SiC) power integrated circuit (IC) composed of a trench-gate vertical metal-oxide-semiconductor field-effect transistor (MOSFET) and a complementary metal-oxide-semiconductor (CMOS) gate buffer. A process of integration compatible with both power MOSFETs and CMOS devices was established. The integrated SiC CMOS gate buffer allows for the successful control of the vertical power MOSFET, and a switching operation at 600 V and 10 A was achieved with a rise time of 24 ns and fall time of 28 ns.