Experimental Analysis of Process Impacts on Fluorine Incorporated Gate Oxide Film Properties Near Gate Edge Region

Fluorine (F) atoms were incorporated into gate SiO
2
films using F
⁺
implantation into gate poly-Si and diffusion anneal which was carried out before or after gate etching. Although out diffusion of F atoms was observed for both cases, F diffusion before gate etching showed different reliability characteristics at shorter gate length. It was considered that the origins were enhanced re-oxidation rate and interface state passivation near gate edge as well as channel center. (Keywords: Fluorine, Interface state density, TDDB, GIDL, Low frequency noise)