Performance Improvement of III-nitrides Visible and Ultraviolet Photodetectors by Manipulating Polarization Effect

Polarization effect is a remarkable characteristic of compound semiconductors, especially group III nitrides. In this work, we show the performance improvement of III-nitrides visible and ultraviolet photodetectors by manipulating polarization effect to realize dopant-free p-type polarization doping, and the regulation of photocarrier transport direction and efficiency in quantum structures.