Ga2O3 – diamond for next generation power electronics

Ga
2
O
3
, with its ultra-wide bandgap and melt-grown substrates, offers the potential for low-cost >1 kV electronics. However, numerous challenges need to be overcome, in particular the lack of good p-doped Ga
2
O
3
and its low thermal conductivity. The potential for overcoming these intrinsic limitations of Ga
2
O
3
with integrated Ga
2
O
3
– diamond junctions for power devices is discussed.