Bottom-Up Synthesized Graphene Nanoribbon Transistors

Bottom-up synthesized graphene nanoribbons (GNRs) exhibit promising electronic properties for post-silicon transistor technologies. However, several challenges remain, such as the synthesis of long length GNRs, their rational placement and alignment on dielectric surface, and achieving low GNR-contacts and uniform high-κ gate dielectrics. This invited talk presents recent progress in integrating GNRs into field-effect transistors (FETs) and discusses the synthesis and integration improvements that may enable the fabrication of GNR devices with the performance needed for the post-silicon era.