Modeling the nucleation and evolution of end of range dislocation loops in silicon

Amorphization commonly occurs during implantation forming end of range (EOR) defects at the amorphous/crystal line (a/c) interface upon annealing. It is imperative to know how these defects form in order to do predictive simulations of dopants. In this study, we developed a model to predict the EOR defect nucleation and evolution. It is assumed that all the loops come from unfaulted {311}'s. The model is verified with the new experimental results obtained by studying the formation of EOR defects by varying the implant energy from 40 keV to 80 keV at a dose of 2/spl times/10/sup 15/ cm/sup -2/.