Short-Circuit Characteristic of Single Gate Driven SiC MOSFET Stack and Its Improvement With Strong Antishort Circuit Fault Capabilities

The single gate driven series connected power device stack possesses the advantages of high compactness and low cost. However, research of its short circuit (SC) characteristic remains uncovered. This article fills this gap and points out that, with the single gate driver it has the potential of over-current limitation. Furthermore, based on it, an improved single gate driven silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor
(mosfet)
stack with strong antishort circuit fault capabilities is proposed. By adding auxiliary circuits to adjust the driving process of the single gate driver, the SiC
mosfet
stack can be automatically turned
off
in both SC conditions of fault under load and hard switch fault, while the normal working principle of the stack is not influenced. Neither active control nor overcurrent detection is required, which is the biggest merit of the proposed topology. Its design and analysis are presented in detail, followed by the validation by conducting simulations and experiments.