Improvement of Electrical Performance in Solution-Processed InZnO Thin-Film Transistor With a Radio Frequency O2 Triggered Multistacked Architecture

A method for radio frequency oxygen (O
₂
) plasma-assisted treatment of indium zinc oxide (IZO) films with a multistacked architecture fabricated by a low-temperature (200 °C) solution process is investigated. We demonstrate that radio frequency O
₂
plasma-assisted posttreatment technology can improve the mobility and stability of IZO thin-film transistors (TFTs). The activity layers were formed by spin coating and subsequently thermally annealed at a low temperature of 200 °C, followed by O
₂
-plasma posttreatment process, to form the O
₂
triggered multistacked architecture. The TFT devices plasma-treated for 3 min exhibit improved electrical characteristics, with a mobility of 7.09 ± 0.24 cm
²
/Vs, an ON OFF ratio of (1.21 ± 1.22)
$\times 10^{{6}}$
, a threshold voltage of
$-0.22\,\,\pm \,\,0.35$
V, and a subthreshold swing of 0.34 ± 0.02 V/dec. The improved results offered by the O
₂
plasma treatment led to a higher mobility and ON/ OFF ratio compared to sample device without this process. The successful fabrication of radio frequency O
₂
triggered multistacked architecture-based IZO TFTs showing the practical potential of high-performance low-temperature solution-processed preparation technology and radio frequency O
₂
plasma-assisted treatment for electrical device application.