Robust 130 mn-node Cu dual damascene technology with low-k barrier SiCN

This paper describes robust 130 nm-node Cu dual damascene interconnection technology with low-k barrier SiCN, eliminating SiN. The total capacitance of the FSG/SiCN structure is designed to the same extent as that of the SiLK/SiN structure. We newly developed processes dedicated to SiCN and realized 130 nm-node Cu dual damascene interconnection with FSG/SiCN, resulting in good electrical characteristics and reliability.