Fault Detection and Analysis in embedded SRAM for sub nanometer technology

Now a day's semiconductor memories are used in every digital system, to store programs and huge data. so that embedded memories occupy more than 94% of the area on SoC. As the technology scaling, the memory yield has huge impact Defect-Per-Million (DPM). Hence it is has become importance to test the memory. The majority of existing fault methods do not cover faults that occur during the manufacturing process. This paper proposes a new parasitic extraction method to identify faults, its location. short defects between the nodes are considered in this method. Faults like Stuck at faults (SAF), Write Before Access Fault (WBAF), Undefine Write Fault (UWF), Undefined Read Fault (URF), Un stabilized Write Fault (USWF), and Un stabilized Read Fault (USRF) are observed by this method and an Undefined faults named as Undefined Short Fault (USF) has been observed.