Comparative Analysis of Different Materials for Gate-All-Around Nanowire FET

This research covers the evaluation of gate all-around nanowire FETs (GAA-NW FETs) for different materials ie. Germanium and Silicon. GAA-NW FETs with different channel materials, electrical parameters such as threshold voltage, drain current and transconductance are explored for different values of channel distances and voltages. The Nano-hub tool is used to run all of these simulations. The results reveal that a germanium-based Gate all-around nanowire device performs better.