A D Band Zero Bias Detector Chip Using Schottky Diode

In this paper, a D band zero bias detector chip using InGaAs Schottky barrier diode (SBD) is proposed. The Schottky barrier diode with 3.5 THz cut-off frequency and 0.16 eV barrier height is realized based on the low barrier Schottky junction formed by contact between InGaAs and Ti. The detector chip is fabricated on a 50 micron InP substrate using the MMIC technology, and the microstrip structure is realized by processing the metal layer on the back of the InP substrate. The RF grounding of the Schottky barrier diode is completed by connecting the metal through hole with the back metal layer. The experimental results show that the voltage sensitivity of the D band detector chip is more than 2100 V/W in the range of D band, and more than 12000 V/W at 122 GHz, when the input RF power is −30 dBm.