Photoluminescence imaging for slip line detection and characterization in silicon substrates

Room temperature photoluminescence imaging is assessed in industrial environment to detect slip line formation on 300 mm resistive silicon wafers used for Insulated Gate Bipolar Transistor (IGBT) technology and to characterize associated dislocations. The technique, with a combined use of macro and micro scale acquisitions, enables inline detection, characterization, and quantification of defects, allowing efficient process optimization and production monitoring.