Design Optimization of Three-Stacked Nanosheet FET From Self-Heating Effects Perspective

Self-heating effect (SHE) is a severe issue arising in the nanoscale field-effect transistors (FETs). It raises the device’s lattice temperature several degrees higher than the ambient temperature and degrades the driving current. The diamond-based dielectric material may be a promising candidate to mitigate the SHE due to its significantly larger thermal conductivity value (
$\text{k}_{\mathrm{ th}}= 2000$
W.m
⁻¹
.K
⁻¹
) than SiO
₂
(
$\text{k}_{\mathrm{ th}}= 1.4$
W.m
⁻¹
.K
⁻¹
). In this paper, we have investigated the potential of crystalline diamond to mitigate the SHE-induced degradation in a partially depleted silicon-on-diamond Nanosheet FET (PDSOD NSFET). The results are compared with the partially depleted silicon-on-insulator (PDSOI) NSFET. Using extensive TCAD simulations, we investigated the impact of varying the ambient temperature and nanosheet thickness on the performance metrics of PDSOD and PDSOI NSFET. Thus, our analysis reveals that PDSOD NSFET is a viable alternative to alleviate the SHE-induced thermal degradation for the same footprint area of SiO
₂
used in PDSOI NSFET.