A Highly Responsive Hydrogen-Terminated Diamond-Based Phototransistor

A high-performance solar-blind phototransistor, which is based on hydrogen-terminated diamond was fabricated and reported. The fabricated phototransistor was based on metal–semiconductor field effect transistor architecture with a high photoresponsivity (
$2.48\times10$
⁴

$\text{A}/\text{W}$
), high external quantum efficiency (
$1.44\times10$
⁵
), and high detectivity (
$5.08\times10$
⁹
Jones) under 213-nm light illumination (437
$\text{W}/\text{m}$
²
). At 5240
$\text{W}/\text{m}$
²
light illumination, the change in drain current exceeds six orders of magnitude. Through transient response measurement, the rise/decay time of the phototransistor is about 88/36 ms and there is no significant persistent photoconductive effect.