Transport-Induced-Charge Distribution Near the Entrance of an Ultrathin Nanopore

In temperature-biased ultrathin nanopores imposed by an external electric field, transport-induced-charge (TIC) phenomena happen that excess net charges are locally induced. The estimate of TIC distribution based on Hall's model of access resistance has a large deviation near the entrance of a nanopore. Here, we suggest a semi-numerical method for accurate analysis of TIC distribution in temperature-biased nanopores, being instructive to understand the entrance effects of ultrathin nanopores.