Investigation of SiGe/Si Bilayer Inverted-T Channel Gate-All-Around Field-Effect-Transistor With Self-Induced Ferroelectric Ge Doped HfO₂

We investigated the ferroelectric properties of self-induced HfGeO
_x
in a HfO
₂
film deposited on a SiGe substrate and analyzed a novel ferroelectric inverted T channel gate-all-around (IT-GAA) with a Si/SiGe bilayer channel and self-induced ferroelectric Hf germanate. The proposed ferroelectric IT-GAAFET with short-channel (gate length = 60 nm) exhibited a steep average subthreshold slope of 53 mV/dec, a drain-induced barrier lowering of only 1.7 mV/V, and a high on-off current ratio of
$1.7 \times 10^{7}$
. The proposed ferroelectric IT-GAA field-effect transistor can be a candidate for the sub-N3 technology node and ultralow-power, high-performance applications.