Multiple Transmitter Coexistence for 5G RF Front End Modules

Worldwide adoption of 4G LTE smartphones and the actual transition to 5G is the main driving engine for semiconductor industry. 5G is expected to reach high data rate speed (1Gbps) and low latency (less than 1ms). 5G will require more RF bandwidth and therefore an increase in the number of components such as SOI switches, acoustic filters and power amplifiers integrated in few RF front end modules. This paper presents new architecture elements for 5G RF front end modules. Circuit details and measurements are presented for coexistence of 5G bands for multiple 4G/5G transmitters.